Post Etch Residue (PER) Cleaners

• Specially formulated to target the selective removal of highly inert chemical residues created during the patterning of high-k dielectric metal oxides, including hafnium, zirconium, and tantalum oxides.
• Works well at room temperature and is easily rinsed.
• Suitable for immersion, batch-spray, and single-wafer chemical applications.

• Semi-aqueous proprietary blend formulated to address post-etch residue (PER) removal in pinched-through via and metal lines for all interconnect and technology nodes.
• Offers a unique blend of ingredients that have been proven to be extremely efficient at quickly and selectively removing organo-metal oxides from the following materials: Al, Cu, Ti, TiN, W and Ni.
• Provides an optimum balance of surface wetting, reduced potential, chelating capacity, and residue solubility to accomplish complete PER dissolution at a low temperature and in short processing time for electronic features such as lines, vias, and pads.

Study of universally compatible post-etch residue cleaning formulations for traditional and high-k dielectric-based residues.