Search Technic Chemistry, Equipment & Controls

Characteristics:

TechniEtch AT 2000 is an ammonia-free, fine topography persulfate micro etch designed for use in pretreatment cycles for printed circuit boards and other copper surfaces.

Characteristics:

TechniEtch 1118 is a proprietary ammonia-free, persulfate micro etch designed to provide improved topography over standard persulfate and peroxide chemistry at the same etch depth. This topography will improve resist, Solder Mask or plating adhesion.

Characteristics: Iodine based metal etchant for use with selective gold applications.

Characteristics:

• Highly effective & selective iodine based Au/Cu etchant.
• PFAS-free formula.
• Contains particular additives that greatly enhance stability.
• Metal loading capability compared to conventional I2/I3- based solutions.

Characteristics:

• Allows for very short immersion time.
• All-in-one process for deoxidation/etching/desmut.
• Eliminates the surface preparation bottleneck for Al plating processing.
• Can be used on a wide range of aluminum grades.

Characteristics:

• Proven acidic aqueous etchant, based on the PAN-like family, specially formulated for Al, Cu, Ni and Ag.
• Exhibits excellent stability, even in the presence of high levels of metal contamination.
• Tailored mixture ratios can be provided upon request.

Characteristics:

• Designed for selective Al, AlCu, Al(Sc)N, Al2O3 anisotropic etching in semiconductor processing.
• Alkaline product with increased compatibility with Ni, Cu and others vs standard PAN-etch solutions.
• Maintains high stability and loading capacity for optimized performance.

Characteristics:

• Provides selective etch and high loading capacity for UBM and RDL applications.
• Also used for selective Cu/Ni in UBM stack because of its great etching metal selectivity.

Characteristics:

• Formulation combining ceric ammonium nitrate (CAN)-based etchant.
• Primarily designed for Cr etching.
• Can also etch Cu, Ag, V, Al, Ti, W, and Ni, with the rate depending on stirring rate / mass transfer.

Characteristics: copper deburr/etch process designed to eliminate copper burrs on QFN packages without adversely affecting the appearance of the tin deposit

Characteristics:

Stabilized H₂O₂-based Cu seed etchant for UBM, RDL & Cu pillar applications.

• High tunability & excellent Cu PVD/ECD selectivity.
• Fully compatible with most metals such as Al, Ti, TiW, Ni.
• Long, effective bath life.
• Easily monitored by end-point detection.
• Direct DI water rinsing.

Characteristics:

• Barrier-layer remover for WLP applications.
• Provides great process window resulting in minimal to zero undercut while etching both metals.

Characteristics:

• Reclaimable H₂O₂-based Ti etchant in advanced UBM and Cu pillar integration materials.
• Ti and TiN barrier etchant with high Al and Cu compatibility.
• High stability and loading capacity.