Post Etch Residue Cleaning for Wafer Level Surface Prep
Technic manufactures a variety of proprietary solutions for Post Etch Residue (PER) cleaning for wafer level surface preparation in semiconductor electronics applications. Our chemically safe cleaners have extremely high metal compatibility for a wide variety of substrates and can be used in combination with all types of production tools.
TechniClean IK73 is specially formulated to target the selective removal of highly-inert chemical residues created during the patterning of high-k dielectric metal oxides including hafnium, zirconium and tantalum oxides. TechniClean IK73 functions well at room temperature and is easily rinsed. The process is suitable in immersion, batch-spray, and single-wafer chemical applications.
TechniClean CA25 is a semi-aqueous proprietary blend that has been formulated to address post etch residue (PER) removal in pinched-through via and metal lines for all interconnect and technology nodes. This advanced residue cleaner offers a unique blend of ingredients that have been proven to be extremely efficient at quickly and selectively removing organo-metal oxides from the following materials: Al, Cu, Ti, TiN, W and Ni.
TechniClean CA25 has been designed to provide an optimum balance of surface wetting, reduced potential, chelating capacity and residue solubility to accomplish complete PER dissolution at a low temperature and short processing time for various electronic features such as lines, vias and pads.
TechniClean PCE7 is an organic proprietary mixture that has been designed to address post-CMP Ceria slurry residues removal on Si and SiO2 substrates. The solution was also showing additional attributes such as epoxy and nitrocellulose based resin dissolution.
TechniClean PCW6 is an aqueous post tungsten CMP solution based on additives designed to address concomitantly: particle electrostatic repulsion, sequestration, dispersion and the strong chelating property of metal ions.
The cleaning performance can be tunes at PoU by simple water dilution. A dilution ratio of 1 to 25 is generally a great compromise to achieve surface cleaning, low defectivity, low ion surface contamination and low via resistance while allowing a low process CoO.