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this is the content I'd like to display when the link is clicked - Support
Semiconductor - Chemistry
Printer FriendlySemiconductor Chemistry
Technic’s team of PHD chemists and experienced field service technicians provide the ongoing technical support and expertise required to meet today’s high standards and demanding requirements in semiconductor technology.
Fused w/ 5 um contact View
Aurostan H
TThe AuroStan H plating process is formulated to deposit a semi-bright to bright eutectic Au/Sn alloy. The alloy ranges from 75 to 82-wt% Au content, with a corresponding melting point between 280°C to 320°C (536°F to 608°F).
The process is suitable for plating bumps as well as larger surface areas, such as the back side of wafers. The electrolyte is compatible with most photo resist systems.
Elevate Gold 7950 with Direct Current View
Elevate Gold 7950
Designed for optimum performance on semiconductors requiring a pure soft gold deposit from a cyanide-free solution.
Easy to operate process that has a slow rising Baumé when compared to other competitive processes resulting in an extended bath life and lower operating costs.
Elevate Gold 7950 is compatible with all industry standard tools.
Large grain tin MSA Avg.
grain size = 3 - 8 µm View
Elevate Tin Lead 1100
Electroplating process for bump plating of pure tin and tin/lead alloys in wafer plating applications.
The process can be utilized for deposition of pure tin, eutectic (60/40) and high lead alloys in wafer plating for advanced packaging applications.
Has the ability to operate at elevated temperatures, has a smooth, uniform, fine grain structure. It is stable alloy over a wide current density range.
Low alpha particle emitting tin and lead concentrates are available.
Elevate Copper 6340
High speed copper plating process capable of depositing copper at 40 – 60 ASF with virtually no internal stress in the deposit. The deposit characteristics allow for coverage to just one side of the wafer without any undesirable bowing of the substrate.
Specifically designed for improved lateral growth on weakly activated surfaces like sputtered copper.
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